part no. zxmn2088de6 20v dual sot23-6 n-channel enhancement mode mosfet with low gate drive capability summary description this new generation dual n-channel trench mosfet from zetex features low on-resistance achievable with low gate drive. features ? low on-resistance ? low gate drive capability ? sot23-6 (dual) package applications ? power management functions ? disconnect switches ? relay driving and load switching ordering information device reel size (inches) tape width (mm) quantity per reel ZXMN2088DE6TA 7 8 3,000 device marking 2088 v (br)dss r ds (on) ( ) i d (a) 0.200 @ v gs = 4.5v 2.1 0.240 @ v gs = 2.5v 1.9 20 0.310 @ v gs = 1.8v 1.7 pinout ? top view g1 s2 g2 d1 s1 d2 product specification sales@twtysemi.com 1 of 3 4008-318-123 http://www.twtysemi.com
ab solute maximum ratings parameter symbol limit unit drain-source voltage v dss 20 v gate-source voltage v gs 8 v continuous drain current @ v gs = 4.5v; t a =25 c (b) (d) @ v gs = 4.5v; t a =70 c (b) (d) @ v gs = 4.5v; t a =25 c (a) (d) i d 2.1 1.7 1.7 a pulsed drain current (c) i dm 8 a power dissipation at t a =25 c (a) (d) linear derating factor p d 0.9 7.2 w mw/ c power dissipation at t a =25 c (a) (e) linear derating factor p d 1.1 8.8 w mw/ c power dissipation at t a =25 c (b) (d) linear derating factor p d 1.3 10.4 w mw/ c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) (d) r ja 139 c/w junction to ambient (a) (e) r ja 113 c/w junction to ambient (b) (d) r ja 96 c/w notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) as above measured at t 5 sec. (c) repetitive rating - 25 mm x 25mm fr4 pcb, d=0.02, pulse width 300us ? pulse width limited by maximum junction temperature. (d) for device with one active die (e) for device with two active die running at equal power. zxmn2088de6 sales@twtysemi.com 2 of 3 4008-318-123 http://www.twtysemi.com product specification
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 20 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 100 na v ds = 3v, v gs =0v zero gate voltage drain current i dss 1 a v ds = 20v, v gs =0v gate-body leakage i gss 100 na v gs = 8v, v ds =0v gate-source threshold voltage v gs(th) 0.4 1.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance ( * ) r ds(on) 112 137 165 0.200 0.240 0.310 v gs = 4.5v, i d = 1.0a v gs = 2.5v, i d = 0.6a v gs = 1.8v, i d = 0.3a forward transconductance ( * ) (?) g fs 4.6 s v ds = 10v, i d = 1.0a dynamic (?) input capacitance c iss 279 pf output capacitance c oss 52 pf reverse transfer capacitance c rss 29 pf v ds = 10v, v gs =0v f=1mhz switching (?) (?) turn-on-delay time t d(on) 2 ns rise time t r 3.2 ns turn-off delay time t d(off) 12.7 ns fall time t f 6.2 ns v dd = 10v,v gs =4.5v i d = 1a r g 6.0 gate charge total gate charge q g 3.8 nc gate-source charge q gs 0.41 nc gate drain charge q gd 0.56 nc v ds = 10v, v gs = 4.5v i d = 2.4a source-drain diode diode forward voltage (?) v sd 0.75 0.95 v t j =25 c, i s = 1.0a, v gs =0v reverse recovery time t rr 6.6 ns reverse recovery charge q rr 1.6 nc t j = 25c, i f = 1.24a di/dt = 100a/s notes: ( * ) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. (?) switching characteristics are independent of operating junction temperature. (?) for design aid only, not subject to production testing. zxmn2088de6 product specification sales@twtysemi.com 3 of 3 4008-318-123 http://www.twtysemi.com
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